Renesas launches first low-voltage gan power semiconductor for AI and robotics

Renesas Electronics has unveiled its first low-voltage gallium nitride (GaN) power semiconductor, targeting applications such as AI data centers and humanoid robots. The product, part of a 100V enhanced-mode (E-mode) GaN discrete power transistor series, includes models like RTP100E005G1FL and RTP100E2P6G1FL, offering improved hard and soft switching figures of merit (FOM) compared to similar GaN devices. Hard switching FOM is reduced by up to 35%, while soft switching FOM is lowered by up to 63%. The GaN devices maintain compatibility with silicon-based packaging, facilitating integration into existing designs. The series provides efficiency gains of 1% to 3% over silicon-based designs, eliminates Qrr losses, and reduces switching losses by 40% to 70%. Renesas acquired Transphorm in June 2024, enabling its entry into the GaN market and the release of 15 reference designs. In July 2025, Renesas launched a 650V fourth-generation GaN FET, and this 100V product marks its first foray into low-voltage GaN technology.