Samsung develops znand-t and znand-i flash for AI optimization

On October 12, 2026, ZDNET Korea reported that Samsung is developing new NAND flash products tailored for AI workloads, including zNAND-T and zNAND-I, in addition to previously announced zNAND-O. The zNAND-T, with 'T' standing for Throughput, is designed to enhance read and write bandwidth for data center AI applications, using TSV-stacked NAND dies, similar to concepts proposed by SanDisk and SK Hynix. The zNAND-I, with 'I' representing IOPS, focuses on improving performance for frequent small data reads and writes, such as KV Cache offloading. These three variants highlight NAND flash moving toward specialized solutions for different AI workloads. The report emphasizes that each zNAND variant is optimized for specific application needs, marking a shift from general-purpose NAND products. This development aligns with industry trends toward customized storage solutions for AI-driven environments.